6 lake street, lawrence, ma 01841 rev: b 1-800-446-1158 / (978) 794-1666 / fax: (978) 689- 0803 1 of 1 2N2609 jan power mosfet p channel processed per mil-prf-19500/296 ? designed for general purpose small signal switching and amplifier applications absolute maximum ratings (t a = 25 0 c unless otherwise noted) parameters / test conditions symbol value units gate-source voltage v gss 30 v power dissipation (1) t a = 25 0 c p d 300 mw operating junction & storage temperature range t op, t stg -65 to +200 0 c (1) derate linearly, 1.71 mw/ 0 c for t a = 25 0 c. electrical characteristics (t a = 25 0 c unless otherwise noted) parameters / test conditions symbol min. max. units gate-source breakdown voltage v ds = 0, i g = 1.0 m adc v (br)gss 30 vdc gate reverse current v ds = 0, v gs = 30 vdc v ds = 0, v gs = 15 vdc i gss 30 22.5 h a drain current v gs = 0, v ds = 5.0 vdc i ddss -2.0 -10.0 h a gate-source cutoff voltage v ds = 5.0 v, i d = 1.0 m adc v gs(off) 0.75 6.0 vdc magnitude of small-signal, common-source short-circuit forward transfer admittance v gs = 0, v ds = 5.0 vdc, f = 1.0 khz ? y fs2 ? 2,000 6,250 m mho small-signal, common-source short-circuit input capacitance v gs = 0, v ds = 5.0 vdc, f = 1.0 mhz c iss 10 pf common-source spot noise figure v gs = 0, v ds = 5.0 vdc, f = 1.0 khz b w = 16%, r g = 1.0 megohms, e gen = 1.82 mvdc, nf 3.0 db t echnical d ata to-18 (to-206aa) mil-prf qpl devices http://
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